- 您现在的位置：买卖IC网 > Sheet目录135 > MBRD5H100T4G (ON Semiconductor)DIODE SCHOTTKY 5A 100V DPAK
发布紧急采购，3分钟左右您将得到回复。
    MBRD5H100T4G, NBRD5H100T4G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 171 °C IF(AV) 5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 171 °C IFRM 10 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 105 A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg ?65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance Junction?to?Case (Note 2) Junction?to?Ambient (Note 2) RJC RJA 1.6 95.8 °C/W 2. When mounted using minimum recommended pad size on FR?4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) (IF = 5 A, T J = 25 °C) (IF = 5 A, T J = 125 °C) VF 0.71 0.60 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125 °C) (Rated dc Voltage, TJ = 25 °C) IR 4.5 3.5 mA A 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0% |
| *型号 | *数量 | 厂商 | 批号 | 封装 |
|---|---|---|---|---|
|
|
添加更多采购
